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| TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURE Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted TO-92 1. EMITTER 2. BASE 3. COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 40 25 5 500 625 150 -55-150 Units V V V mA mW 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VCE=1V, IC= 500mA IC= 500mA, IB= 50mA IC= 500mA, IB= 50mA VCE=6V,IC=20mA,f=30MHz 150 40 0.6 1.2 V V MHz Test conditions MIN 40 25 5 0.1 0.1 0.1 64 400 TYP MAX UNIT V V V A A A IC= 100A , IE=0 IC= 1mA , IB=0 IE= 100A , IC=0 VCB= 40V , VCE=20V , IE=0 IE=0 VEB= 5V, IC=0 VCE=1V, IC=50mA Transition frequency fT CLASSIFICATION OF hFE(1) Rank Range D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 J 300-400 Typical Characteristics S9013 |
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